UC Berkeley、三星与英特尔提出纳机电栅控增益单元 eDRAM
Nanoelectromechanical Switches Target More Efficient Embedded DRAM (UC Berkeley, Samsung, Intel)
UC Berkeley、三星电子与英特尔的研究者联合发表《Nanoelectromechanically Gated Gain Cell eDRAM》，用纳机电开关作为增益单元 eDRAM 的栅极。
Researchers at the UC Berkeley, Samsung Electronics, and Intel published “Nanoelectromechanically Gated Gain Cell eDRAM.”
Abstract Excerpt:
“The memory wall and the slowdown of static random access memory (SRAM) scaling have renewed interest in gain-cell embedded dynamic random access memory (DRAM). While gain cells offer high density and energy efficiency, they suffer from limited retention, parasitic coupling, and the need for boosted write voltages. This work introduces a nanoelectromechanically gated gain cell for embedded DRAM. ”
Find the technical paper here. October 2026
Finnan, Collin P., Choong-Ho Rhee, Tahir Ghani, and Tsu-Jae King-Liu. “Nanoelectromechanically Gated Gain Cell eDRAM.” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2026): 223–230. https://doi.org/10.1109/JXCDC.2026.3717204. Open Access license.
来源：Semiconductor Engineering · semiengineering.com